050-7065 rev b 9-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com apt6025bll apt6025sll 600v 24a 0.250 ? ? ? ? ? g d s to-247 d 3 pak bll sll power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? to-247 or surface mount d 3 pak package power mos 7 r mosfet characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 12a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (v ds = 480v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 600 0.250 100 500 100 35 apt6025bll_sll 600 24 96 30 40 325 2.60 -55 to 150 300 24 30 1300
050-7065 rev b 9-2004 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse dynamic characteristics apt6025bll_sll source-drain diode ratings and characteristics thermal characteristics symbol r jc r ja min typ max 0.38 40 unit c/w characteristic junction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 4.51mh, r g = 25 ? , peak i l = 24a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 24a di / dt 700a/s v r v dss t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 24a @ 25c resistive switching v gs = 15v v dd = 300v i d = 24a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 400v, v gs = 15v i d = 24a, r g = 5 ? inductive switching @ 125c v dd = 400v v gs = 15v i d = 24a, r g = 5 ? min typ max 2910 535 55 65 15 34 18 19 30 18 280 110 420 140 unit pf nc ns j z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 24a ) reverse recovery time (i s = - 24a , dl s /dt = 100a/s) reverse recovery charge (i s = - 24a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 24 96 1.3 592 9.56 8 symbol i s i sm v sd t rr q rr dv / dt
050-7065 rev b 9-2004 80 70 60 50 40 30 20 10 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.2 1.1 1.0 0.9 0.8 0.7 0.6 typical performance curves 5v 5.5v 6v 6.5 v gs =15 &10v 7v 8v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c r ds(on) , drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs(th) , threshold voltage bv dss , drain-to-source breakdown r ds(on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) v ds > i d (on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle apt6025bll_sll v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, r ds(on) vs. temperature figure 9, threshold voltage vs temperature 0 5 10 15 20 25 30 0123456789 0 10 20 30 40 50 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 normalized to v gs = 10v @ i d = 12a 80 70 60 50 40 30 20 10 0 25 20 15 10 5 0 2.5 2.0 1.5 1.0 0.5 0.0 i d = 12a v gs = 10v 0.0175 0.143 0.219 0.00401f 0.00641f 0.158f power (watts) junction temp. ( c) rc model case temperature. ( c)
050-7065 rev b 9-2004 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage figure 13, source-drain diode forward voltage 10,000 1,000 100 10 200 100 10 1 v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 600 0 10 20 30 40 50 0 10 20 30 40 50 60 70 80 90 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5 96 50 10 1 16 12 8 4 0 10ms 1ms 100s t c =+25c t j =+150c single pulse operation here limited by r ds (on) v ds =300v v ds =120v v ds =480v i d = 24a t j =+150c t j =+25c c rss c iss c oss i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 400v r g = 5 ? t j = 125c l = 100h v dd = 400v r g = 5 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f apt6025bll_sll 0 10203040 010203040 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50 50 40 30 20 10 0 800 700 600 500 400 300 200 100 0 60 50 40 30 20 10 0 900 800 700 600 500 400 300 200 100 0 switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 400v i d = 24a t j = 125c l = 100h e on includes diode reverse recovery. v dd = 400v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery.
apt6025bll_sll 050-7065 rev b 9-2004 figure 19, turn-off switching waveforms and definitions 90% t d(off) gate voltage drain voltage drain current 90% t f 10% switching energy t j = 125 c figure 18, turn-on switching waveforms and definitions 10 % t d(on) drain current drain voltage gate voltage 90% 10 % t r 5 % 5 % switching energy t j = 125 c 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) revised 8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) revised 4/18/95 d 3 pak package outline apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt15df60
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